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hexfet power mosfet micro3 ? s g 1 2 d 3 parameter max. units v ds drain- source voltage -12 v i d @ t a = 25c continuous drain current, v gs @ -4.5v -4.3 i d @ t a = 70c continuous drain current, v gs @ -4.5v -3.4 a i dm pulsed drain current -34 p d @t a = 25c power dissipation 1.3 p d @t a = 70c power dissipation 0.8 linear derating factor 0.01 w/c e as single pulse avalanche energy 33 mj v gs gate-to-source voltage 8.0 v t j, t stg junction and storage temperature range -55 to + 150 c

thermal resistance parameter typ. max. units r ja maximum junction-to-ambient 75 100 form quantity IRLML6401TRPBF-1 micro3 ? ( package type standard pack orderable part number base part number features benefits industry-standard pinout sot-23 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability v ds -12 v r ds(on) max (@v gs = -4.5v) 0.05 q g (typical) 10 nc i d (@t a = 25c) -4.3 a

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! " # $% parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.2 v t j = 25c, i s = -1.3a, v gs = 0v t rr reverse recovery time ??? 22 33 ns t j = 25c, i f = -1.3a q rr reverse recoverycharge ??? 8.0 12 nc di/dt = -100a/ s repetitive rating; pulse width limited by max. junction temperature. pulse width 300 s; duty cycle 2%. source-drain ratings and characteristics -1.3 -34 & s d g !'(
)*+ ,, !% !* starting t j = 25c, l = 3.5mh r g = 25 , i as = -4.3a. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -12 ??? ??? v v gs = 0v, i d = -250 a v (br)dss / t j breakdown voltage temp. coefficient ??? -0.007 ??? v/c reference to 25c, i d = -1ma ??? ??? 0.050 v gs = -4.5v, i d = -4.3a r ds(on) static drain-to-source on-resistance --- ??? 0.085 v gs = -2.5v, i d = -2.5a --- ??? 0.125 v gs = -1.8v, i d = -2.0a v gs(th) gate threshold voltage -0.40 -0.55 -0.95 v v ds = v gs , i d = -250 a g fs forward transconductance 8.6 ??? ??? s v ds = -10v, i d = -4.3a ??? ??? -1.0 v ds = -12v, v gs = 0v ??? ??? -25 v ds = -9.6v, v gs = 0v, t j = 55c gate-to-source forward leakage ??? ??? -100 v gs = -8.0v gate-to-source reverse leakage ??? ??? 100 v gs = 8.0v q g total gate charge ??? 10 15 i d = -4.3a q gs gate-to-source charge ??? 1.4 2.1 nc v ds = -10v q gd gate-to-drain ("miller") charge ??? 2.6 3.9 v gs = -5.0v t d(on) turn-on delay time ??? 11 ??? v dd = -6.0v t r rise time ??? 32 ??? i d = -1.0a t d(off) turn-off delay time ??? 250 ??? r d = 6.0 t f fall time ??? 210 ??? r g = 89 c iss input capacitance ??? 830 ??? v gs = 0v c oss output capacitance ??? 180 ??? pf v ds = -10v c rss reverse transfer capacitance ??? 125 ??? ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) a i dss drain-to-source leakage current na ns

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! " # $% fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20 s pulse width tj = 150c vgs top -7.0v -5.0v -4.5v -3.0v -2.5v -1.8v -1.5v bottom -1.0v 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 - i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 150c v ds = -12v 20 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -4.5v -4.3a 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.0v 20 s pulse width tj = 25c vgs top -7.0v -5.0v -4.5v -3.0v -2.5v - 1.8v -1.5v bottom -1.0v

! " # $% fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 1000 0.1 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 1 10 100 v ds , drain-to-source voltage (v) 0 200 400 600 800 1000 1200 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0.1 1 10 100 0.2 0.6 1.0 1.4 1.8 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 4 8 12 16 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -4.3a v = -10v ds

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! " # $% fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 t , case temperature ( c) -i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 20 40 60 80 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.9a -3.4a -4.3a

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! " # $% fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage 0 10203040 -i d , drain current ( a ) 0.00 0.05 0.10 0.15 0.20 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) vgs = -4.5v vgs = -2.5v vgs = -1.8v fig 14. typical threshold voltage vs. junction temperature -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.3 0.4 0.5 0.6 0.7 0.8 - v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = -250 a 1.0 2.0 3.0 4.0 5.0 6.0 7.0 -v gs, gate -to -source voltage ( v ) 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10 r d s ( o n ) , d r a i n - t o - s o u r c e v o l t a g e ( ) id = -4.3a

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! " # $% micro3 (sot-23 / to-236ab) part marking information

0.08 0.88 0.01 0.89 0.95 bs c mil l ime t e r s mi n e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 b s c dimens ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 b s c l1 l 0.40 0.60 .0118 b s c aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 e d 5 6 3 12 ccc c b a b 5 6 e e1 a2 a a1 bbb c a b 3x b aaa c 3 s urf 0 3x l l1 h 4 7 2.10 e1 1.90 bs c .075 b s c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] r e comme nde d f oot p r i nt 3x 3x not es 1. dimens ioning and t olerancing per asme y14.5m-1994. 4 datum plane h is located at the mold parting line. 5 d at u m a and b t o b e de t e r mi n e d at dat u m p l an e h . 6 d i me ns i on s d and e 1 ar e me as u r e d at dat u m p l ane h . 2. dimensions are shown in millimeters and inches. 3. cont rolling dimension: millimet er. 7 dimension l is the lead length for soldering to a substrate. 8. out line conf orms t o je de c out line t o- 236ab .

f = irlml6401 aa 27 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a le t t e r y 8 3 1 2 5 4 7 6 0 9 y c 03 wor k we e k 01 02 a w b 04 d 24 26 25 x z y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c b j y 51 29 28 30 c b d 50 x 52 z note: a l i ne above the work week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246 indus trial version 2007 ye ar 2003 2001 2002 2005 2004 2006 2007 2009 2008 2010 2003 2001 ye ar 2002 2005 2004 2006 2009 2008 2010 2017 2013 2011 2012 2015 2014 2016 2017 2019 2018 2020 2013 2011 2012 2015 2014 2016 2019 2018 2020

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2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541.

! ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ms l 1 (per je de c j-s t d-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jesd47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ revision history date comment 10/28/2014 ?

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